PART |
Description |
Maker |
N82S181A N82S181 |
8K-Bit TTL Bipolar PROM
|
NXP Philips Semiconductors
|
UPB429-2 UPB429-1 UPB429-3 |
2048 x 8-BIT BIPOLA TTL PROM
|
NEC Corp.
|
AM27S35ADC-S AM27S35PC-S AM27S35_BKA AM27S35_BUA A |
(AM27S35) 8192 Bit Bipolar Registered PROM 8-Bit Binary Counters With Input Registers 16-SO 0 to 70 8-Bit Binary Counters With Input Registers 16-SOIC 0 to 70 Serial-in shift registers with output latches 16-SO 0 to 70 8-Bit Binary Counters With Input Registers And 3-State Outputs 20-SOIC 0 to 70 Serial-in shift registers with output registers 16-PDIP 0 to 70 Serial-in shift registers with output registers 16-SOIC 0 to 70 1K X 8 OTPROM, CDFP24 8-Bit Binary Counters With Input Registers 16-PDIP 0 to 70 1K X 8 OTPROM, CDIP24 8,192-Bit (1024x8) Bipolar Registered PROM with Programmable INITIALIZE input 1K X 8 OTPROM, CDIP24 8,192-Bit (1024x8) Bipolar Registered PROM with Programmable INITIALIZE 8,192位(1024x8)双极注册胎膜早破与可编程初始化
|
AMD[Advanced Micro Devices] Advanced Micro Devices, Inc.
|
AM27S19A AM27S19APC |
Ic-256-bit Bipolar Prom
|
AMD
|
AM27S281 AM27S281A AM27S181 AM27S181A |
8/192-BIT (1024 X 8) BIPOLAR PROM 8,192-BIT (1024 X 8) BIPOLAR PROM
|
Advanced Linear Devices, Inc. ALD[Advanced Linear Devices]
|
UPB405C UPB405D UPB425C UPB425D |
4096 BIT BIPOLAR TTL
|
NEC
|
8200901JA 8200901LA 82009013X 8200901LX 8200901KX |
x8 PROM x8胎膜早破 Memory, Digital, Bipolar, 64K PROM
|
N/A
|
MX23C1010 MX23C1010MC-10 MX23C1010MC-12 MX23C1010M |
1M-BITMASKROM(8BITOUTPUT) From old datasheet system 1M-BIT MASK ROM(8 BIT OUTPUT) MINIATURE GENERAL PURPOSE RELAY 128K X 8 MASK PROM, 45 ns, PDIP32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 90 ns, PDIP32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 100 ns, PQCC32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 150 ns, PQCC32 1M-BIT MASK ROM (8 BIT OUTPUT) 100万位掩码光盘位输出) 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 120 ns, PDIP32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 70 ns, PDSO32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 120 ns, PQCC32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 100 ns, PDSO32
|
MCNIX[Macronix International] Macronix 旺宏 Macronix International Co., Ltd. Altera, Corp.
|
UT28F256 UT28F256T-45UPX 5962F9689103QXA 5962F9689 |
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si). Radiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si). Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si). Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si). 320 x 240 pixel format, LED or CFL Backlight Recalibration Service for 2120B B&K Oscilloscope Oscilloscope; Scope Type:Analog; Scope Bandwidth:30 MHz; Scope Channels:2 Scope; Calibrated:No; Rise Time:12ns; Sensitivity:5 mV/div to 5 V/div; Accuracy: /- 3 %; Resistance:1Mohm Recalibration Service for 2125A B&K Oscilloscope Radiation-Hardened 32K x 8 PROM 辐射加固32K的8胎膜早破 Recalibration Service for 2120B B&K Oscilloscope 辐射加固32K的8胎膜早破 Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si). Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si). Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si). Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si). Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si). Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si). Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si). Radiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si). Radiation-Hardened 32K x 8 PROM
|
AEROFLEX[Aeroflex Circuit Technology] Aeroflex Inc. Aeroflex, Inc. NEC, Corp. Aeroflex Circuit Techno...
|
N74F189AN 74F189 74F189A N74F189AD 74F189A_3 |
From old datasheet system 64-bit TTL bipolar RAM, inverting 3-State
|
PHILIPS[Philips Semiconductors] NXP Semiconductors
|
MBM29LV004TC-12 MBM29LV004TC-90PNS MBM29LV004TC-70 |
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 120 ns, PDSO40 4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 70 ns, PDSO40 4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 90 ns, PDSO40 IC, LN PWR DC2DC CONVERT 48VDC-5VDC 1.2A MFR 4M (512K X 8) BIT
|
FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|
S29JL032H60TFI310 S29JL032H90TFI310 S29JL032H70TAI |
JT 3C 3#16 SKT PLUG 2M X 16 FLASH 3V PROM, 90 ns, PDSO48 JT 37C 37#22D PIN WALL RECP 2M X 16 FLASH 3V PROM, 70 ns, PDSO48 32M BIT CMOS 3.0V FLASH MEMORY 32兆位CMOS 3.0V闪存 32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 60 ns, PDSO48 32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Spansion Inc. Advanced Micro Devices, Inc. Spansion, Inc. http://
|
|